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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HT200209 Issued Date : 1993.05.15 Revised Date : 2002.05.08 Page No. : 1/4
HT772
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HT772 is designed for using in output stage of 1w audio amplifier, voltage regulator, DC-DC converter and relay driver.
Absolute Maximum Ratings (Ta=25C)
TO-126
* Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature .................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Ta=25C) ....................................................................................... 1 W Total Power Dissipation (Tc=25C) ..................................................................................... 10 W * Maximum Voltages and Currents BVCBO Collector to Base Voltage...................................................................................... -40 V BVCEO Collector to Emitter Voltage................................................................................... -30 V BVEBO Emitter to Base Voltage........................................................................................... -5 V IC Collector Current (DC) ..................................................................................................... -3 A IC Collector Current (Pulse) ................................................................................................. -7 A IB Base Current (DC) ........................................................................................................ -0.6 A
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min. -40 -30 -5 30 100 Typ. -0.3 -1 200 80 55 Max. -1 -1 -0.5 -2 400 Unit V V V uA uA V V Test Conditions IC=-100uA IC=-1mA IE=-10uA VCB=-30V VEB=-3V IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A IC=-20mA, VCE=-2V IC=-1A, VCE=-2V IC=-0.1A, VCE=-5V VCB=-10V, f=1MHz, IE=0
*Pulse Test: Pulse Width 380us, Duty Cycle2%
MHz pF
Classification Of hFE2
Rank Range Q 100-200 P 160-320 E 200-400
HT772
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
1000 125 C
o
Spec. No. : HT200209 Issued Date : 1993.05.15 Revised Date : 2002.05.08 Page No. : 2/4
Saturation Voltage & Collector Current
10000 VCE(s at) @ IC=5IB
75 C
o
25 C
o
Saturation Voltage (mV)
1000 75 C 100
o
hFE
100
hFE @ VCE=2V
125 C 10 25 C
o
o
10 1 10 100 1000 10000
1 1 10 100 1000 10000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage & Collector Current
10000 VCE(sat) @ IC=10IB
Saturation Voltage & Collector Current
10000 VCE(sat) @ IC=20IB
Saturation Voltage (mV)
Saturation Voltage (mV)
1000 75 C 100 125 C 10
o o
1000 75 C
o o
25 C
o
100 125 C
o
25 C
10
1 1 10 100 1000 10000
1 1 10 100 1000 10000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage & Collector Current
10000 VCE(sat) @ IC=40IB 1000 75 C
o
Saturation Voltage & Collector Current
10000 VBE(sat) @ IC=10IB
Saturation Voltage (mV)
Saturation Voltage (mV)
75 C 1000 25 C
o
o
100
125 C 25 C
o
o
10
125 C
o
1 1 10 100 1000 10000
100 1 10 100 1000 10000
Collector Current-IC (mA)
Collector Current-IC (mA)
HT772
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HT200209 Issued Date : 1993.05.15 Revised Date : 2002.05.08 Page No. : 3/4
Capacitance & Reverse-Biased Voltage
1000
Cutoff Frequency & Collector Current
1000
Cutoff Frequency (MHz).. .
Capacitance (pF)
100
100
VCE=5V
Cob 10
10
1 0.1 1 10 100
1 1 10 100 1000
Reverse-Biased Voltage (V)
Collector Current (mA)
Safe Operating Area
10000
PT=1ms
Collector Current (mA)
1000
PT=100ms PT=1s
100
10
1 1 10 100
Forward Biased Voltage (V)
HT772
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-126 Dimension
D A B 123 G C I E J K M
Spec. No. : HT200209 Issued Date : 1993.05.15 Revised Date : 2002.05.08 Page No. : 4/4
Marking:
3
Date Code
H 772
T
Control Code
4
Style: Pin 1.Emitter 2.Collector 3.Base
F H
L
1 2
3-Lead TO-126 Plastic Package HSMC Package Code: T
*: Typical
DIM 1 2 3 4 A B C D E
Inches Min. Max. *3 *3 *3 *3 0.1500 0.1539 0.2752 0.2791 0.5315 0.6102 0.2854 0.3039 0.0374 0.0413
Millimeters Min. Max. *3 *3 *3 *3 3.81 3.91 6.99 7.09 13.50 15.50 7.52 7.72 0.95 1.05
DIM F G H I J K L M
Inches Min. Max. 0.0280 0.0319 0.0480 0.0520 0.1709 0.1890 0.0950 0.1050 0.0450 0.0550 0.0450 0.0550 *0.0217 0.1378 0.1520
Millimeters Min. Max. 0.71 0.81 1.22 1.32 4.34 4.80 2.41 2.66 1.14 1.39 1.14 1.39 *0.55 3.50 3.86
Notes: 1.Dimension and tolerance based on our Spec. dated Mar. 6,1995.
2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
* Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HT772
HSMC Product Specification

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